Layer-by-Layer Evolution of a Two-Dimensional Electron Gas Near an Oxide Interface

Effect of Seed Layer on the Morphology of ‎Zinc Oxide Nanorods as an Electron ‎Transport Layer in Polymer Solar Cells ‎

   Zinc oxide has been considered as a promising semiconductor material for fabrication of transparent conductive oxides (TCOs), electronic devices, optoelectronics, and solar cells. Among the various morphologies of zinc oxide, nanorods are more widely used because of the ease of synthesis and providing a direct path for the transport of charge carriers. The electrochemical deposi...

Creation of a two-dimensional electron gas at an oxide interface on silicon.

In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration wit...

Two-dimensional electron gas near full polarization

We establish the consistency of the Fermi liquid description and find a relation between the Fermi liquid constants for a two-dimensional electron system near the point of full polarization due to a parallel magnetic field H. Our results enable us to predict connections between different thermodynamic properties of the system. In particular, we find that near the point of full polarization Hc ,...

Two dimensional electron gas at oxide interfaces

Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer

We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density of electrons in the buried silicon quantum well exists, the tunneling of electrons from the buried...